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SPI08N50C3 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
SPI08N50C3
Infineon
Infineon Technologies Infineon
SPI08N50C3 Datasheet PDF : 0 Pages
SPP08N50C3, SPI08N50C3
SPA08N50C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 400 V, ID = 7.6 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s 3)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA FP
Tsold
Values
min. typ. max.
-
-
1.5
-
-
3.9
-
-
62
-
-
80
-
- 260
Unit
K/W
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 500
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=7.6A
-
600
breakdown voltage
-V
-
Gate threshold voltage
VGS(th) ID=350µA, VGS=VDS 2.1
3
3.9
Zero gate voltage drain current IDSS
VDS=500V, VGS=0V,
µA
Tj=25°C
-
0.5
1
Tj=150°C
-
-
100
Gate-source leakage current
IGSS
VGS=20V, VDS=0V
-
Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A
Tj=25°C
-
Tj=150°C
-
Gate input resistance
RG
f=1MHz, open drain
-
- 100 nA
0.5 0.6
1.5
-
1.2
-
Rev. 2.91
Page 2
2009-11-27
 

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