G1736 View Datasheet(PDF) - Hamamatsu Photonics

Part Name

Description

Manufacturer

G1736

GaAsP photodiode Red sensitivity extended type Diffusion type

Hamamatsu Photonics 

sSpectral response

0.5

(Typ. Ta=25 ˚C)

0.4

0.3

0.2

0.1

0

200

400

600

WAVELENGTH (nm)

800

KGPDB0024EA

sRise time vs. load resistance

10 ms

(Typ. Ta=25 ˚C, VR=0 V)

1 ms

100 µs

G1737, G1740

G1736

10 µs

1 µs

G1735, G1738

G3297

100 ns102

103

104

105

106

LOAD RESISTANCE (Ω)

KGPDB0026EA

sShunt resistance vs. ambient temperature

10 TΩ

(Typ. VR=10 mV)

1 TΩ

100 GΩ

G1735, G1738, G3297

G1736

10 GΩ

1 GΩ

G1737, G1740

100 MΩ

10 MΩ

-20

0

20

40

60

AMBIENT TEMPERATURE (˚C)

80

KGPDB0028EA

GaAsP photodiode Diffusion type

sPhoto sensitivity temperature characteristic

(Typ.)

+1.5

+1.0

+0.5

0

-0.5

200

400

600

WAVELENGTH (nm)

800

KGPDB0025EA

sDark current vs. reverse voltage

1 nA

(Typ. Ta=25 ˚C)

100 pA

10 pA

G1737, G1740

G1736

1 pA

100 fA

0.001

G1735, G1738, G3297

0.01

0.1

1

REVERSE VOLTAGE (V)

10

KGPDB0027EA

sShort circuit current linearity

(Typ. Ta=25 ˚C, A light source fully illuminated)

100

10-2

RL=100 Ω

10-4

10-6

10-8

10-10

10-12

10-14

DEPENDENT ON NEP

10-1160-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2 100

INCIDENT LIGHT LEVEL (lx)

KGPDB0008EA

Share Link: