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SMP100MC-270 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
SMP100MC-270
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SMP100MC-270 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Table 4: Thermal Resistances
Symbol
Parameter
Rth(j-a) Junction to ambient (with recommended footprint)
Rth(j-l) Junction to leads
Table 5: Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VBO Breakover voltage
IRM Leakage current
IPP Peak pulse current
IBO Breakover current
IH Holding current
VR Continuous reverse voltage
IR Leakage current at VR
C Capacitance
SMP100MC
Value
100
20
Unit
°C/W
°C/W
IRM @ VRM
IR @ VR
Types
max.
max.
note1
µA
V
µA
V
SMP100MC-120*
108
120
SMP100MC-140*
126
140
SMP100MC-160
144
160
2
5
SMP100MC-200
180
200
SMP100MC-230
207
230
SMP100MC-270
243
270
Note 1: IR measured at VR guarantee VBR min VR
Note 2: see functional test circuit 1
Note 3: see test circuit 2
Note 4: see functional holding current test circuit 3
Note 5: VR = 50V bias, VRMS=1V, F=1MHz
Note 6: VR = 2V bias, VRMS=1V, F=1MHz
* in development
Dynamic
VBO
max.
note 2
V
155
180
205
255
295
345
Static
VBO @ IBO
max. max.
note 3
V mA
150
175
200
800
250
285
335
IH
C
C
min. typ. typ.
note 4 note 5 note 6
mA pF pF
30 60
30 60
25 50
150
20 45
20 40
20 40
3/10
 

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