SMAJ530HE3/61 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SMAJ530HE3/61 Datasheet PDF : 4 Pages
| |||
SMAJ530 & SMAJ550
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SMAJ530
SMAJ550
Minimum breakdown voltage
100 µA
VBR
Max. clamping voltage
400 mA, 10/1000 µs-waveform
VC
Maximum DC reverse leakage current VWM
ID
Typical temperature coefficient
of VBR
Typical capacitance (1)
0V
CJ
200 V
CJ
Note:
530
550
760
1.0
650
90
7.5
(1) Measured at 1 MHz
UNIT
V
V
µA
mV/°C
pF
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SMAJ530
SMAJ550
Typical thermal resistance, junction to lead
RθJL
30
Typical thermal resistance, junction to ambient (1)
RθJA
120
Note:
(1) Mounted on minimum recommended pad layout
UNIT
°C/W
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SMAJ530-E3/61
0.064
61
SMAJ530-E3/5A
0.064
5A
SMAJ530HE3/61 (1)
0.064
61
SMAJ530HE3/5A (1)
0.064
5A
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
75
10
50
1
25
0.1
0.1 µs
1.0 µs 10 µs 100 µs 1.0 ms
td - Pulse Width (s)
10 ms
Figure 1. Peak Pulse Power Rating Curve
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88391
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 21-Oct-08
|
|
Share Link: 