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K10N60-2008 데이터 시트보기 (PDF) - Infineon Technologies

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K10N60(2008) Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Infineon
Infineon Technologies Infineon
K10N60 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SKP10N60A
SKW10N60A
100ns
td(off)
100ns td(off)
tf
td(on)
tr
10ns
0A
5A
10A 15A 20A 25A
tf
td(on)
10ns tr
0
20
40
60
80
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 2 5 ,
Dynamic test circuit in Figure E)
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 10A,
Dynamic test circuit in Figure E)
100ns
td(off)
td(on)
tf
tr
10ns
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 10A, RG = 2 5 ,
Dynamic test circuit in Figure E)
5,5V
5,0V
4,5V
4,0V
3,5V
3,0V
2,5V
2,0V
1,5V
1,0V
-50°C 0°C
max.
typ.
m in.
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
6
Rev. 2.3 Sep 08
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