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E-SG2525AP013TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
E-SG2525AP013TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
E-SG2525AP013TR Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SG2525A-SG3525A
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
PWM COMPARATOR
Minimum Duty-cycle
Maximum Duty-cycle
Input Threshold
Zero Duty-cycle
Maximum Duty-cycle
*
Input Bias Current
SHUTDOWN SECTION
Soft Start Current
VSD = 0 V, VSS = 0 V
Soft Start Low Level VSD = 2.5 V
Shutdown Threshold
To outputs, VSS = 5.1 V
Tj = 25 °C
Shutdown Input Current VSD = 2.5 V
*
Shutdown Delay
VSD = 2.5 V Tj = 25 °C
OUTPUT DRIVERS (each output) (VC = 20 V)
Output Low Level
Isink = 20 mA
Output High Level
Isink = 100 mA
Isource = 20 mA
Under-Voltage Lockout
IC
Collector Leakage
tr*
Rise Time
tf*
Fall Time
TOTAL STANDBY CURRENT
Isource = 100 mA
Vcomp and Vss = High
VC = 35 V
CL = 1 nF, Tj = 25 °C
CL = 1 nF, Tj = 25 °C
Is
Supply Current
Vi = 35 V
SG2525A
Min. Typ. Max.
0
45 49
0.7 0.9
3.3 3.6
0.05 1
25 50 80
0.4 0.7
0.6 0.8 1
0.4 1
0.2 0.5
0.2 0.4
1
2
18 19
17 18
6
7
8
200
100 600
50 300
14 20
SG3525A
Min. Typ. Max.
0
45 49
0.7 0.9
3.3 3.6
0.05 1
25 50 80
0.4 0.7
0.6 0.8 1
0.4 1
0.2 0.5
0.2 0.4
1
2
18 19
17 18
6
7
8
200
100 600
50 300
14 20
Unit
%
%
V
V
µA
µA
V
V
mA
µs
V
V
V
V
V
µA
ns
ns
mA
* These parameters, although guaranteed over the recommended operating conditions, are not 100 % tested in production.
Tested at fosc = 40 KHz (RT = 3.6 K, CT = 10nF, RD = 0 ). Approximate oscillator frequency is defined by :
f=
1
CT (0.7 RT + 3 RD)
.DC transconductance (gM) relates to DC open-loop voltage gain (Gv) according to the following equation : Gv = gM RL whereRL is the resistance
from pin 9 to ground. The minimum gM specification is used to calculate minimum Gv when the error amplifier output is loaded.
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