Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1. V =0V
2.
I
GS
=
-250
μ
A
D
0.8
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
101
100
10-1
100
Operation in This Area
is Limited by R
DS(on)
100 µs
1 ms
10 ms
DC
※ Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101
102
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = -10 V
2. ID = -3.3 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
6
5
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
1 0 -1
D = 0.5
0 .2
0 .1
0 .05
0 .02
0 .01
sin g le p u ls e
※ N otes :
1 . Z θ JC(t) = 2 .5 5 ℃ /W M a x .
2. D uty F a ctor, D = t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002