SFR9230B View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
SFR9230B Datasheet PDF : 9 Pages
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Typical Characteristics
101 Top :
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
100 Bottom : -5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.8
1.5
V = - 10V
GS
V = - 20V
1.2
GS
0.9
0.6
※ Note : T = 25℃
J
0.3
0
5
10
15
20
25
30
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
Crss = Cgd
1500
1000
500
0
10-1
Ciss
C
oss
C
rss
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
101
150℃
100 25℃
-55℃
※ Notes :
1. VDS = -40V
2. 250µs Pulse Test
10-1
2
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.0
150℃ 25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -40V
DS
V = -100V
DS
8
V = -160V
DS
6
4
2
※ Note : ID = -6.5 A
0
0
8
16
24
32
40
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. B, December 2002
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