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SFR9230B View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
SFR9230B
Fairchild
Fairchild Semiconductor Fairchild
SFR9230B Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -200 V, VGS = 0 V
VDS = -160 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-200
--
--
--
--
--
--
-0.16
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0 --
-4.0
V
VGS = -10 V, ID = -2.7 A
-- 0.6 0.8
VDS = -40 V, ID = -2.7 A (Note 4)
--
5.9
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 775 1000 pF
-- 135 175 pF
--
45
60
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -100 V, ID = -6.5 A,
RG = 25
--
10
30
ns
--
30
70
ns
-- 120 250
ns
(Note 4, 5)
--
60 130
ns
VDS = -160 V, ID = -6.5 A,
--
33
45
nC
VGS = -10 V
-- 4.5
--
nC
(Note 4, 5)
--
14.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-5.4
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-22
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -5.4 A
--
--
-5.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -6.5 A,
-- 160
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
1.25
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 20mH, IAS = -5.4A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -6.5A, di/dt 400A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
 

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