SEP8506
GaAs Infrared Emitting Diode
FEATURES
• Side-emitting plastic package
• 50¡ (nominal) beam angle
• 935 nm wavelength
• Mechanically and spectrally matched to
SDP8406 phototransistor, SDP8106
photodarlington and SDP8000/8600 series
Schmitt trigger
DESCRIPTION
The SEP8506 is a gallium arsenide infrared emitting
diode molded in a side-emitting red plastic package.
The chip is positioned to emit radiation through a plastic
lens from the side of the package.
INFRA-20.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
DIM_071.ds4
Honeywell reserves the right to make
40
h
changes in order to improve design and
supply the best products possible.