DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

BUZ32 View Datasheet(PDF) - Intersil

Part Name
Description
Manufacturer
BUZ32 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BUZ32
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ32
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current, TC = 55oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200
200
9.5
38
±20
75
150
0.6
-55 to 150
E
V
V
A
A
V
W
mJ
W/oC
oC
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V
200
VGS(TH) VGS = VDS, ID = 1mA (Figure 9)
2.1
IDSS
TJ = 25oC, VDS = 200V, VGS = 0V
-
TJ = 125oC, VDS = 200V, VGS = 0V
-
IGSS VGS = 20V, VDS = 0V
-
rDS(ON) ID = 4.5A, VGS = 10V (Figure 8)
-
gfs
VDS = 25V, ID = 4.5A (Figure 11)
2.2
td(ON) VCC = 30V, ID 2.9A, VGS = 10V, RGS = 50Ω,
-
tr
RL = 10. (Figures 16, 17)
-
td(OFF)
-
tf
-
CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
-
COSS
-
CRSS
-
RθJC
RθJA
-
3
20
100
10
0.35
5.0
30
40
110
60
1500
250
70
1.67
75
-
4
250
1000
100
0.4
-
45
60
140
80
2000
400
120
V
V
µA
µA
nA
S
ns
ns
ns
ns
pF
pF
pF
oC/W
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD
TC = 25oC
-
-
9.5
ISDM
TC = 25oC
-
-
38
VSD
TJ = 25oC, ISD = 19A, VGS = 0V
-
1.3
1.7
trr
TJ = 25oC, ISD = 9.5A, dISD/dt = 100A/µs,
-
400
-
QRR
VR = 100V
-
6.0
-
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 20V, starting TJ = 25oC, L = 3.3µH, RG = 50, IPEAK = 9A. (See Figures 14 and 15).
UNITS
A
A
V
ns
µC
2
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]