SB10150CT-LF View Datasheet(PDF) - Won-Top Electronics
Part Name
Description
Manufacturer
SB10150CT-LF Datasheet PDF : 4 Pages
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WTE
POWER SEMICONDUCTORS
SB10150CT – SB10200CT Pb
10A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
Features
Schottky Barrier Chip
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
B
C
G
A
PIN1 2 3
D
Mechanical Data
Case: TO-220, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
F
E
P
I
H
L
J
K
TO-220
Dim
Min
Max
A
13.90
15.90
B
9.80
10.70
C
2.54
3.43
D
3.56
4.56
E
12.70
14.73
F
0.51
0.96
G
3.55 Ø 4.09 Ø
H
5.75
6.85
I
4.16
5.00
J
2.03
2.92
K
0.30
0.65
L
1.14
1.40
P
2.29
2.79
All Dimensions in mm
PIN 1 -
PIN 3 -
+
Case, PIN 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TC = 95°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@IF = 5.0A
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
Tj, TSTG
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB10150CT
SB10200CT
Unit
150
200
V
105
140
V
10
A
150
A
0.92
V
0.5
50
mA
700
pF
-65 to +150
°C
SB10150CT – SB10200CT
1 of 4
© 2008 Won-Top Electronics
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