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SB10150 View Datasheet(PDF) - PANJIT INTERNATIONAL

Part Name
Description
Manufacturer
SB10150
PanJit
PANJIT INTERNATIONAL PanJit
SB10150 Datasheet PDF : 2 Pages
1 2
DATA SHEET
SB1020~SB10150
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 150 Volts CURRENT 10 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet Rohs environment
substance directive request
MECHANICAL DATA
Case: TO-220AC Molded plastic
Terminals: Solder plated, solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
TO-220AC
.419(10.66)
.387(9.85)
.139(3.55)
MIN
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.025(0.65)MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL SB1020 SB1030 SB1040 SB1050 SB1060 SB1080 SB10100 SB10150 UNITS
Maximum Recurrent Peak Reverse Voltage
V RRM
20
30
40
50
60
80
100
150
V
Maximum RMS Voltage
V RMS
14
21
28
35
42
56
70
105
V
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Current .375"(9.5mm)
lead length at Tc =100OC
IAV
Peak Forward Surge Current :8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
IFSM
Maximum Forward Voltage at 10A,
VF
20
30
40
0.55
Maxi mum D C Reverse C urrent at TA =25OC
Rated D C B locki ng Voltage TA =100OC
IR
Typi cal Thermal Resi stance
RθJC
50
60
10
150
0.75
0.5
50
3.0
80
100
0.85
150
V
A
A
0.92
V
mA
OC / W
Operati ng Juncti on and S torage Temperature Range
TJ,TSTG
-50 TO +125
OC
Note.
Both Bonding and Chip structure are available.
REV.0-MAR.19.2005
PAGE . 1
 

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