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S-1000N20-I4T1G View Datasheet(PDF) - Seiko Instruments Inc

Part NameS-1000N20-I4T1G SII
Seiko Instruments Inc SII
DescriptionUltra Small Package High Precision Voltage Detector
S-1000N20-I4T1G Datasheet PDF : 38 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
Rev.2.3_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-1000 Series
3. Change of detection voltage
In Nch open-drain output products of the S-1000 series, detection voltage can be changed using resistance dividers or
diodes as shown in Figures 29 to 30. In Figure 29, hysteresis width also changes.
VDD
RA*1
VIN
S-1000N
OUT
VDD
Vf1
Vf2
VIN
S-1000N
OUT
+
RB
C*1
(Nch open-drain
output products)
VSS
Detection voltagae = RA + RB • −VDET
RB
Hysterisis width = RA + RB VHYS
RB
*1. RA should be 75 kor less, and C should be 0.01 µF
or more to prevent oscillation.
If C is not connected, RA should be 800 or less.
VSS
(Nch open-drain
output product)
Detection voltage = Vf1+Vf2+(VDET)
Figure 30
Caution
If RA and RB are large, the hysteresis width
may also be larger than the value given by
the above equation due to the through-type
current (which flows slightly in an Nch
open-drain product).
Figure 29
Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient
evaluation using the actual application to set the constants.
Seiko Instruments Inc.
23
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