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S-1000C30-M5T1G Ver la hoja de datos (PDF) - Seiko Instruments Inc

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S-1000C30-M5T1G Ultra Small Package High Precision Voltage Detector SII
Seiko Instruments Inc SII
S-1000C30-M5T1G Datasheet PDF : 38 Pages
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-1000 Series
Rev.2.3_00
2. CMOS output products
Table 10
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Measure-
Min. Typ. Max. Unit ment
circuit
Detection voltage*1
Hysteresis width
VDET
VHYS
VDET(S) VDET(S) VDET(S)
×0.99
×1.01
V
1
VDET VDET VDET
×0.03 ×0.05 ×0.07
V
1
Current consumption
ISS
VDD = −VDET(S)+ 1.5 V S-1000C15 to 39
VDD = 5.5 V
S-1000C40 to 46
350 900 nA
2
350 900 nA
2
Operating voltage
VDD
Output current
IOUT
Response time
tPLH
Detection voltage
∆−VDET
temperature coefficient*2 Ta•−VDET
Output transistor,
Nch, VDS = 0.5 V, VDD = 1.2 V
Output transistor,
Pch, VDS = 0.5 V, VDD = 5.5 V
Ta = −40 to +85 °C
0.95
5.5 V
1
1.36 2.55
mA
3
1.71 2.76
mA
4
60 µs
1
±100
±350
ppm/
°C
1
*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the detection voltage
range in Table 2.)
*2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation.
[ ] [ ] [ ] ∆ − VDET
Ta
mV / °C *1 = ( ) VDET(S) Typ.
V *2 × ∆ − VDET
Ta VDET
ppm / °C *3 ÷ 1000
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
10
Seiko Instruments Inc.
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