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RN49A2 View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
RN49A2 TOSHIBA Transistor Silicon NPN-PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) Toshiba
Toshiba Toshiba
RN49A2 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
RN49A2
Electrical Characteristics (Ta = 25°C) (Q1)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistance
Resistance ratio
Symbol
Test Condition
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 10 V, IC = 0
VCE = 5 V, IC = 10 mA
IC = 5 mA, IB = 0.25 mA
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 0.1 mA
VCE = 10 V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
⎯ −100
nA
⎯ −500
0.082 0.15 mA
80
0.1 0.3
V
1.5
5.0
V
1.0
1.5
V
250
MHz
3
pF
32.9 47 61.1 kΩ
0.9
1.0
1.1
Electrical Characteristics (Ta = 25°C) (Q2)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistance
Resistance ratio
Symbol
Test Condition
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −10 mA
IC = −5 mA, IB = −0.25 mA
VCE = −0.2 V, IC = −5 mA
VCE = −5 V, IC = −0.1 mA
VCE = −10 V, IC = −5 mA
VCB = −10 V, IE = 0, f = 1 MHz
f=1MHz
Min Typ. Max Unit
0.078
80
⎯ −0.1
0.6
0.5
200
100
nA
500
0.145 mA
0.3 V
1.1 V
0.8 V
MHz
3
pF
1.54 2.2
2.86 kΩ
0.0421 0. 0468 0.0 515
3
2007-11-01
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