DK1306FWK View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DK1306FWK Datasheet PDF : 13 Pages
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DK13..FW
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
VTM
Maximum on-state voltage
At 300A peak, Tcase = 25oC
-
I /I
Peak reverse and off-state current
At V /V , T = 125oC
-
RRM DRM
RRM DRM case
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% VDRM Tj = 125oC, Gate open circuit -
dI/dt Rate of rise of on-state current
Gate source 20V, 20Ω
tr < 0.5µs, Tj = 125˚C
Repetitive 50Hz -
Non-repetitive -
V
Threshold voltage
At T = 125oC
-
T(TO)
vj
rT
On-state slope resistance
At Tvj = 125oC
-
t
gd
t
(ON)TOT
Delay time
Total turn-on time
Tj = 25˚C, IT = 50A,
-
V = 300V, I = 1A,
D
G
dI/dt
=50A/µs,
dI /dt
G
=
1A/µs
-
IH
Holding current
Tj = 25oC, ITM = 1A, VD = 12V
60*
tq
Turn-off time
*Typical value.
Tj = 125˚C, IT = 100A, VR =
dV/dt = 200V/µs (Linear to
50V,
60%
VDRM),
tq
code:
W
-
dI /dt
R
=
30A/µs,
Gate
open
circuit
Max. Units
2.35 V
15 mA
200 V/µs
500 A/µs
800 A/µs
1.65 V
3.5 mΩ
3
µs
1.5
µs
-
mA
10
µs
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
IGT
V
GD
VRGM
I
FGM
PGM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
V
DRM
=
12V,
T
case
=
25oC,
R
L
=
6Ω
V = 12V,
DRM
T
case
=
25oC,
R
L
=
6Ω
At
V
DRM
T
case
=
125oC,
R
L
=
1kΩ
Anode positive with respect to cathode
Typ. Max. Units
-
3.0
V
-
200 mA
-
0.2
V
-
5.0
V
-
4
A
-
16
W
-
3.0
W
3/13
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