QSE156 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
QSE156 Datasheet PDF : 7 Pages
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Electrical Characteristics (TA = -40°C to +85°C, VCC = 4.5V to 16V)
Symbol
Parameter
Test Conditions
Min. Typ.
Ee(+)
Positive Going Threshold
Irradiance(5)
TA = 25°C
0.025
Ee(+)/Ee(-) Hysteresis Ratio
1.10
ICC
Supply Current(6)
Ee = 0 or 0.3mW/cm2
Peak to Peak Ripple which f = DC to 50MHz
will Cause False Triggering
QSE156/C (Buffer Totem Pole)
VOH
High Level Output Voltage(5) Ee = 0.3mW/cm2, IOH = -10mA VCC – 2.1
VOL
Low Level Output Voltage
Ee = 0, IOL = 16mA
QSE157/C (Inverter Totem Pole)
VOH
High Level Output Voltage(5) Ee = 0, IOH = -10mA
VCC – 2.1
VOL
Low Level Output Voltage
Ee = 0.3mW/cm2, IOL = 16mA
QSE158/C (Buffer Open Collector)
IOH
High Level Output Current(5) Ee = 0.3mW/cm2, VOH = 30V
VOL
Low Level Output Voltage
Ee = 0, IOL = 16mA
QSE159/C (Inverter Open Collector)
IOH
High Level Output Current(5) Ee = 0, VOH = 30V
VOL
Low Level Output Voltage
Ee = 0.3mW/cm2, IOL = 16mA
QSE156/C, QSE157/C
tR, tF Output Rise, Fall Times
Ee = 0 or 0.3mW/cm2,
tPHL, tPLH Propagation Delay
f = 10kHz, DC = 50%,
RL = 360Ω(5)
6.0
QSE158/C, QSE159/C
tR, tF Output Rise, Fall Times
Ee = 0 or 0.3mW/cm2,
tPHL, tPLH Propagation Delay
f = 10kHz, DC = 50%,
RL = 360Ω(5)
6.0
Note:
5. λ = 880nm (AlGaAs).
Max.
0.250
2.00
5.0
2.00
0.40
0.40
100
0.40
100
0.40
70
100
Units
mW/cm2
mA
V
V
V
V
V
µA
V
µA
V
nS
µS
nS
µS
©2004 Fairchild Semiconductor Corporation
QSE156/C, QSE157/C, QSE158/C, QSE159/C Rev. 1.0.0
3
www.fairchildsemi.com
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