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BCP71M データシートの表示(PDF) - Siemens AG

部品番号コンポーネント説明メーカー
BCP71M NPN Silicon AF Power Transistor Siemens
Siemens AG Siemens
BCP71M Datasheet PDF : 4 Pages
1 2 3 4
BCP 71M
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 32
-
-V
Collector-base breakdown voltage
IC = 100 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 8 V, IE = 0
Collector cutoff current
VCB = 8 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 10 mA, VCE = 5 V
IC = 500 mA, VCE = 1 V
IC = 2 A, VCE = 2 V
V(BR)CBO 32
V(BR)EBO 5
ICBO
-
ICBO
-
IEBO
-
hFE
25
85
50
-
-
-
-
- 100 nA
-
20 µA
- 100 nA
-
-
-
- 475
-
-
Collector-emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
VCEsat
- 0.18 - V
Base-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
VBEsat
-
-
1.2 V
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT
- 100 - MHz
Ccb
-
80
- pF
1) Pulse test: t < 300µs; D < 2%
SSeemmicicoonndduucctotor rGGrorouupp
22
Au 1-19928-1-1919-081
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