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BCW68F View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BCW68F
Siemens
Siemens AG Siemens
BCW68F Datasheet PDF : 6 Pages
1 2 3 4 5 6
BCW 67
BCW 68
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BCW 67
BCW 68
Collector-base breakdown voltage
IC = 10 µA
BCW 67
BCW 68
Emitter-base breakdown voltage, IE = 10 µA
Collector cutoff current
VCB = 32 V
VCB = 45 V
VCB = 32 V, TA = 150 ˚C
VCB = 45 V, TA = 150 ˚C
BCW 67
BCW 68
BCW 67
BCW 68
Emitter-base cutoff current, VEB = 4 V
DC current gain1)
IC = 100 µA, VCE = 10 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
IC = 10 mA, VCE = 1 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
IC = 100 mA, VCE = 1 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
IC = 500 mA, VCE = 2 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
V
32
45
V(BR)CB0
45
60
V(BR)EB0 5
ICB0
IEB0
hFE
20 nA
20 nA
20
µA
20
µA
20 nA
35
50
80
75
120 –
180 –
100 160 250
160 250 400
250 350 630
35
60
100 –
1) Pulse test: t 300 µs, D = 2 %.
Semiconductor Group
3
 

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