Q62702-C1727 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

Q62702-C1727

NPN Silicon AF Transistors

Siemens AG 

BC 846 ... BC 850

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

V(BR)CE0

V

IC = 10 mA

BC 846

65

–

–

BC 847, BC 850

45

–

–

BC 848, BC 849

30

–

–

Collector-base breakdown voltage

V(BR)CB0

IC = 10 µA

BC 846

80

–

–

BC 847, BC 850

50

–

–

BC 848, BC 849

30

–

–

Collector-emitter breakdown voltage

V(BR)CES

IC = 10 µA, VBE = 0

BC 846

80

–

–

BC 847, BC 850

50

–

–

BC 848, BC 849

30

–

–

Emitter-base breakdown voltage

V(BR)EB0

IE = 1 µA

BC 846, BC 847

6

–

–

BC 848, BC 849, BC 850

5

–

–

Collector cutoff current

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

ICB0

–

–

15 nA

–

–

5

µA

DC current gain

IC = 10 µA, VCE = 5 V

BC 846 A, BC 847 A, BC 848 A

BC 846 B … BC 850 B

BC 847 C, BC 848 C, BC 849 C, BC 850 C

IC = 2 mA, VCE = 5 V

BC 846 A, BC 847 A, BC 848 A

BC 846 B … BC 850 B

BC 847 C, BC 848 C, BC 849 C, BC 850 C

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

hFE

VCEsat

–

–

140 –

–

250 –

–

480 –

110 180 220

200 290 450

420 520 800

mV

–

90 250

–

200 600

Base-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

–

–

700 –

900 –

Base-emitter voltage

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(on)

580 660 700

–

–

770

1)Pulse test: t ≤ 300 µs, D = 2 %.

Semiconductor Group

3

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