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BC847C View Datasheet(PDF) - Siemens AG

Part NameBC847C Siemens
Siemens AG Siemens
DescriptionNPN Silicon AF Transistors
BC847C Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BC 846 ... BC 850
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA
BC 846
65
BC 847, BC 850
45
BC 848, BC 849
30
Collector-base breakdown voltage
V(BR)CB0
IC = 10 µA
BC 846
80
BC 847, BC 850
50
BC 848, BC 849
30
Collector-emitter breakdown voltage
V(BR)CES
IC = 10 µA, VBE = 0
BC 846
80
BC 847, BC 850
50
BC 848, BC 849
30
Emitter-base breakdown voltage
V(BR)EB0
IE = 1 µA
BC 846, BC 847
6
BC 848, BC 849, BC 850
5
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0
15 nA
5
µA
DC current gain
IC = 10 µA, VCE = 5 V
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
IC = 2 mA, VCE = 5 V
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
hFE
VCEsat
140 –
250 –
480 –
110 180 220
200 290 450
420 520 800
mV
90 250
200 600
Base-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
700 –
900 –
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(on)
580 660 700
770
1)Pulse test: t 300 µs, D = 2 %.
Semiconductor Group
3
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