PZT157C View Datasheet(PDF) - Secos Corporation.
Part Name
Description
Manufacturer
PZT157C Datasheet PDF : 2 Pages
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Elektronische Bauelemente
PZT157
PNP Transistor
Silicon Planar High Performance Transistor
Description
RoHS Compliant Product
$VXIIL[RI³&´VSHFLILHVKDORJHQ OHDGIUHH
SOT-223
The PZT157 is designed for general
purpose switching and amplifier
applications.
Features
* 3 Amps Continous Current
* -60 Volt VCEO
* Low Saturation Voltages
Date Code
157
BC
E
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current (DC)
Collector Current (Pulse)
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Value
-80
-60
-5
-3
-6
2
-55~+150
Units
V
V
V
A
W
CO
ELECTRICAL CHARACTERISTICS Tamb=25oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
Min
-80
-60
-5
-
-
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
On-Time
Off-Time
*VCE(sat)1 -
*VCE(sat)2 -
*VBE(sat)
-
*VBE(on)
-
*hFE1
70
*hFE2
100
*hFE3
80
*hFE4
40
fT
100
Cob
-
Ton
-
Toff
-
unless otherwise specified
Typ.
-
-
-
-
-
-150
-450
-0.9
-0.8
200
200
170
150
140
-
40
450
Max
-
-
-
-100
-100
-300
-600
-1.25
-1.0
-
300
-
-
-
30
-
-
Unit
V
V
V
nA
nA
mV
V
V
MHz
pF
nS
Test Conditions
IC=-100µA, IE=0
IC=-10mA, IB=0
IE=-100µA, IC=0
VCB=-60V, IE=0
VEB=-4V,I C=0
IC=-1A,IB=-100mA
I C=- 3A,IB=-300mA
I C=- 1A,IB=-100mA
IC=-1A,VCE=-2V
VCE=-2 V, IC=-50 mA
VCE=-2 V, IC=-500mA
VCE=- 2 V, IC=-1A
VCE=- 2 V, IC=-2A
VCE=- 5 V, IC=-100mA, f=100MHz
VCB=-10V, f=1MHz
VCC=-10V,IC=-500mA,IB1=IB2=-50mA
*Measured under pulse condition. Pulse width≦300µs, Duty Cycle≦2%
Spice parameter data is available upon request for this device.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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