PZT651T1 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

PZT651T1

NPN Silicon Planar Epitaxial Transistor

ON Semiconductor 

PZT651

300

270

240 TJ = 125°C

NPN

VCE = 2.0 V

210

180

25°C

150

120

- 55°C

90

60

30

0

10 20

50 100 200 500 1.0 A 2.0 A 4.0 A

IC, COLLECTOR CURRENT (mA)

Figure 1. Typical DC Current Gain

250

225 TJ = 125°C

200

PNP

VCE = -2.0 V

175

25°C

150

125

100

- 55°C

75

50

25

0

-10 - 20

- 50 -100 - 200 - 500 -1.0 A -2.0 A -4.0 A

IC, COLLECTOR CURRENT (mA)

Figure 2. Typical DC Current Gain

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

50

NPN

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

100 200

500 1.0 A

IC, COLLECTOR CURRENT (mA)

Figure 3. On Voltages

2.0 A 4.0 A

NPN

1.0

0.9

0.8

TJ = 25°C

0.7

0.6

0.5

0.4

0.3

IC = 10 mA IC = 100 mA IC = 500 mA

IC = 2.0 A

0.2

0.1

0

0.05 0.1 0.2

0.5 1.0 2.0 5.0 10 20

IB, BASE CURRENT (mA)

50 100 200 500

Figure 5. Collector Saturation Region

-2.0

-1.8

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0

-50

PNP

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

-100 -200

-500 -1.0 A

IC, COLLECTOR CURRENT (mA)

Figure 4. On Voltages

-2.0 A -4.0 A

PNP

-1.0

-0.9

-0.8

TJ = 25°C

-0.7

-0.6

-0.5

-0.4

-0.3

IC = -500 mA

IC = -2.0 A

-0.2

-0.1

IC = -10 mA IC = -100 mA

0

-0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20

IB, BASE CURRENT (mA)

-50 -100-200 -500

Figure 6. Collector Saturation Region

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