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PZT2907AT3G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
PZT2907AT3G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
PZT2907AT3G Datasheet PDF : 0 Pages
PZT2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc
CollectorEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
CollectorBase Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
nAdc
10
CollectorEmitter Cutoff Current
(VCE = 30 Vdc, VBE = 0.5 Vdc)
ICEX
nAdc
50
BaseEmitter Cutoff Current
(VCE = 30 Vdc, VBE = 0.5 Vdc)
IBEX
nAdc
50
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
75
100
100
100
300
50
Collector-Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Vdc
0.4
1.6
Base-Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
Vdc
1.3
2.6
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
200
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cc
pF
8.0
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
Ce
pF
30
SWITCHING TIMES
Turn-On Time
Delay Time
Rise Time
ton
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc)
td
tr
Turn-Off Time
Storage Time
Fall Time
toff
(VCC = 6.0 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
tf
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
45
ns
10
40
100
ns
80
30
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