DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

AD8001R-EB View Datasheet(PDF) - Analog Devices

Part Name
Description
Manufacturer
AD8001R-EB Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
AD8001
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation @ 25°C2
PDIP Package (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
SOIC (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W
8-Lead CERDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 W
SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Lead PDIP Package: θJA = 90°C/W
8-Lead SOIC Package: θJA = 155°C/W
8-Lead CERDIP Package: θJA = 110°C/W
5-Lead SOT-23-5 Package: θJA = 260°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8001 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately 150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8001 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
2.0
1.5
8-LEAD
SOIC PACKAGE
8-LEAD
PDIP PACKAGE
TJ = +150؇C
8-LEAD
CERDIP PACKAGE
1.0
Model
Temperature
Range
AD8001AN
AD8001AQ
AD8001AR
AD8001AR-REEL
AD8001AR-REEL7
AD8001ART-REEL
AD8001ART-REEL7
AD8001ACHIPS
5962-9459301MPA*
–40°C to +85°C
–55°C to +125°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
*Standard Military Drawing Device.
0.5
5-LEAD
SOT-23-5 PACKAGE
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE – ؇C
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
Package
Description
8-Lead PDIP
8-Lead CERDIP
8-Lead SOIC
13" Tape and REEL
7" Tape and REEL
13" Tape and REEL
7" Tape and REEL
Die Form
8-Lead CERDIP
Package
Option
N-8
Q-8
R-8
R-8
R-8
RT-5
RT-5
Q-8
Branding
HEA
HEA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8001 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. D
–3–
WARNING!
ESD SENSITIVE DEVICE
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]