PHP110NQ06LT View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PHP110NQ06LT Datasheet PDF : 13 Pages
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PHP110NQ06LT
N-channel TrenchMOS logic level FET
Rev. 02 — 4 March 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC convertors
General industrial applications
Motors, lamps and solenoids
Uninterruptible power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
-
-
55 V
-
-
75 A
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
200 W
Dynamic characteristics
QGD
gate-drain charge VGS = 5 V; ID = 25 A; VDS = 44 V; -
17 -
nC
Tj = 25 °C; see Figure 11
Static characteristics
RDSon drain-source
VGS = 10 V; ID = 25 A; Tj = 25 °C; -
on-state resistance see Figure 9 and 10
6.2 7
mΩ
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