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STP10NK60Z View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP10NK60Z Datasheet PDF : 19 Pages
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Electrical characteristics
STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=480 V, ID=8A,
RG=4.7Ω, VGS=10V
(see Figure 20)
Min. Typ. Max Unit
20
ns
20
ns
55
ns
30
ns
18
ns
18
ns
36
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD=10A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=8A, di/dt = 100A/µs,
VDD=40 V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
10 A
36 A
1.6 V
570
ns
4.3
µC
15
A
Table 8.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min Typ Max Unit
BVGSO(1)
Gate-source breakdown
voltage
Igs=± 1mA (open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
6/19
 

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