STP10NK60Z View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP10NK60Z

N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM (2)

PTOT

Drain-source voltage (VGS = 0)

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)

dv/dt (3) Peak diode recovery voltage slope

VISO Insulation withstand volatge (DC)

Tj

Operating junction temperature

Tstg Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD <10A, di/dt < 200A/µs, VDD =80% V(BR)DSS

TO-220

D²/I²PAK

10

5.7

36

115

0.92

--

Value

Unit

TO-220FP TO-247

600

± 30

10(1)

5.7 (1)

36 (1)

35

0.28

4000

4.5

2500

V

V

10

A

5.7

A

36

A

156

W

1.25 W/°C

V

V/ns

--

V

-55 to 150

°C

Table 2. Thermal data

TO-220

D²PAK TO-220FP TO-247 Unit

I²PAK

Rthj-case Thermal resistance junction-case Max

1.09

3.6

0.8 °C/W

Thermal resistance junction-pcb Max

Rthj-pcb

60

(when mounted on minimum footprint)

°C/W

Rthj-amb Thermal resistance junction-amb Max

62.5

50 °C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

3/19

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