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F1S70N03 View Datasheet(PDF) - Harris Semiconductor

Part NameF1S70N03 Harris
Harris Semiconductor Harris
Description70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs
F1S70N03 Datasheet PDF : 6 Pages
1 2 3 4 5 6
RFP70N03, RF1S70N03, RF1S70N03SM
Typical Performance Curves (Continued)
PULSE DURATION = 250µs, VGS = 10V, ID = 70A
2.0
2.0
VGS = VDS, ID = 250µA
1.6
1.5
1.2
1.0
0.8
0.5
0.4
0.0
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
0.0
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
ID = 250µA
2.0
1.6
1.2
0.8
0.4
0.0
-80
-40
0
40
80
120
160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
101
100
0.5
0.2
0.1
10-1 0.05
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
PDM
t1
t2
NOTES:
1. DUTY FACTOR, D = t1/t2
2. PEAK TJ = PDM x (ZθJC) +TC
10-2
10-1
10-0
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
7000
VGS = 0V, FREQUENCY (f) = 1MHz
6000
5000
4000
3000
2000
1000
CISS
COSS
CRSS
0
0
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10. TYPICAL CAPACITANCE vs VOLTAGE
30.0
22.5
VDD = BVDSS
10.0
7.5
VDD = BVDSS
15.0
5.0
0.75BVDSS
0.75BVDSS
0.50BVDSS
0.50BVDSS
7.5
0.25BVDSS
0.25BVDSS
2.5
RL = 0.43
IG(REF) = 3.0mA
VGS = 10V
0.0
0.0
20 -II-GG-----((--A-R---CE----FT---))--
t, TIME (µs)
80 -II-GG-----((--A-R---CE----FT---))--
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
3-48
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