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F1S70N03 View Datasheet(PDF) - Harris Semiconductor

Part NameDescriptionManufacturer
F1S70N03 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs Harris
Harris Semiconductor Harris
F1S70N03 Datasheet PDF : 6 Pages
1 2 3 4 5 6
RFP70N03, RF1S70N03, RF1S70N03SM
Typical Performance Curves
300
CASE TEMPERATURE (TC) = +25oC
100
100µs
1ms
OPERATION IN THIS
AREA MAY BE
10 LIMITED BY rDS(ON)
VDSS
MAX = 30V
1
1
10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
10ms
100ms
DC
50
FIGURE 1. SAFE-OPERATING AREA CURVE
300
IDM
STARTING TJ = +25oC
STARTING TJ = +150oC
100
If R = 0
tAV = (L) (IAS)/(1.3 x RATED BVDSS - VDD)
If R 0
10 tAV = (L/R) ln [(IAS x R)/(1.3 x RATED BVDSS - VDD) +1]
0.01
0.10
1.0
tAV , TIME IN AVALANCHE (ms)
10.0
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150 175
TC, CASE TEMPERATURE (oC)
FIGURE 4. NORMALIZED POWER DISSIPATION vs TEMPERA-
TURE DERATING CURVE
200 VGS = 10V
160
PULSE DURATION = 250µs, TC = +25oC
VGS = 8V
VGS = 7V
120
80
40
0
0.0
VGS = 6V
VGS = 5V
VGS = 4V
1.5
3.0
4.5
6.0
7.5
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
200
PULSE TEST
PULSE DURATION = 250µs
160 DUTY CYCLE = 0.5% MAX
120
80
VDD = 15V
-55oC
+25oC
+175oC
40
0
0.0
2.0
4.0
6.0
8.0
10.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
3-47
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