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Part Name  

F1S70N03 View Datasheet(PDF) - Harris Semiconductor

Part NameF1S70N03 Harris
Harris Semiconductor Harris
Description70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs
F1S70N03 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Specifications RFP70N03, RF1S70N03, RF1S70N03SM
Electrical Specifications At Case Temperature (TC) = +25oC, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
Drain-Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
30
Gate Threshold Voltage
Zero Gate Voltage Drain Current
VGS(TH)
VGS = VDS, ID = 250µA
2
IDSS
VDS=30V
TC = 25oC
-
VGS = 0V
TC = 150oC
-
Gate-Source Leakage Current
IGSS
VGS = ±20V
-
On Resistance
rDS(ON)
ID = 70A, VGS = 10V
-
Turn-On Time
tON
VDD = 15V, ID = 70A
-
Turn-On Delay Time
tD(ON)
RL = 0.214, VGS = +10V
-
Rise Time
tR
RGS = 2.5
-
Turn-Off Delay Time
tD(OFF)
-
Fall Time
tF
-
Turn-Off Time
tOFF
-
Total Gate Charge
Gate Charge at 10V
QG(TOT)
VGS = 0 to 20V
VDD = 24V,
-
ID = 70A,
QG(10)
VGS = 0 to 10V
RL = 0.343
-
Threshold Gate Charge
QG(TH)
VGS = 0 to 2V
-
Input Capacitance
CISS
VDS = 25V, VGS = 0V
-
Output Capacitance
COSS
f = 1MHz
-
Reverse Transfer Capacitance
CRSS
-
Thermal Resistance Junction to Case
RθJC
-
Thermal Resistance Diode
RθJA
-
Junction to Ambient
TYP
-
-
-
-
-
-
-
20
20
40
25
-
215
120
6.5
3300
1750
750
-
-
MAX UNITS
-
V
4
V
1
µA
50
µA
100
nA
0.010
80
ns
-
ns
-
ns
-
ns
-
ns
125
ns
260
nC
145
nC
8.0
nC
-
pF
-
pF
-
pF
1.0
oC/W
80
oC/W
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
Diode Forward Voltage
Reverse Recovery Time
VSD
ISD = 70A
tRR
ISD = 70A, dISD/dt = 100A/µs
MIN
TYP MAX UNITS
-
-
1.5
V
-
-
125
ns
3-46
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