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OP162GP View Datasheet(PDF) - Analog Devices

Part Name
Description
Manufacturer
OP162GP Datasheet PDF : 15 Pages
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OP162/OP262/OP462–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = ؎5.0 V, VCM = 0 V, TA = +25؇C, unless otherwise noted)
Parameter
Symbol Conditions
Min
Typ
INPUT CHARACTERISTICS
Offset Voltage
VOS
OP162G, OP262G, OP462G
25
–40°C TA +125°C
H Grade, –40°C TA +125°C
D Grade, –40°C TA +125°C
0.8
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection
Large Signal Voltage Gain
Long-Term Offset Voltage
Offset Voltage Drift
Bias Current Drift
IB
IOS
VCM
CMRR
AVO
VOS
VOS/T
IB/T
–40°C TA +125°C
–40°C TA +125°C
–5
–4.9 V VCM +4.0 V,
–40°C TA +125°C
70
RL = 2 k, –4.5 V VOUT 4.5 V
RL = 10 k, –4.5 V VOUT 4.5 V 75
–40°C TA +125°C
25
G Grade1
Note 2
260
± 2.5
110
35
120
1
250
OUTPUT CHARACTERISTICS
Output Voltage Swing High
VOH
Output Voltage Swing Low
VOL
Short Circuit Current
ISC
Maximum Output Current
IOUT
IL = 250 µA, –40°C TA +125°C 4.95
IL = 5 mA
4.85
IL = 250 µA, –40°C TA +125°C
IL = 5 mA
Short to Ground
4.99
4.94
–4.99
–4.94
± 80
± 30
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
PSRR
ISY
Supply Voltage Range
VS
VS = ± 1.35 V to ± 6 V,
–40°C TA +125°C
OP162, VOUT = 0 V
–40°C TA +125°C
OP262, OP462, VOUT = 0 V
–40°C TA +125°C
60
110
650
550
+3.0 (± 1.5)
DYNAMIC PERFORMANCE
Slew Rate
SR
–4 V < VOUT < 4 V, RL = 10 k
13
Settling Time
tS
To 0.1%, AV = –1, VO = 2 V Step
475
Gain Bandwidth Product
GBP
15
Phase Margin
φm
64
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
0.5
Voltage Noise Density
en
f = 1 kHz
9.5
Current Noise Density
in
f = 1 kHz
0.4
NOTES
1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.
2Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.
Specifications subject to change without notice.
Max
325
800
1
3
5
500
650
± 25
± 40
+4
600
–4.95
–4.85
Units
µV
µV
mV
mV
mV
nA
nA
nA
nA
V
dB
V/mV
V/mV
V/mV
µV
µV/°C
pA/°C
V
V
V
V
mA
mA
dB
800
µA
1.15
mA
775
µA
1
mA
+12 (± 6) V
V/µs
ns
MHz
Degrees
µV p-p
nV/Hz
pA/Hz
–4–
REV. C
 

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