4N39 View Datasheet(PDF) - Isocom
Part Name
Description
Manufacturer
4N39 Datasheet PDF : 4 Pages
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10000
4000
2000
1000
Holding Current vs. Ambient
Temperature
R
GK
=300Ω
1kΩ
Normalized to
VAK = 50V
R
GK
=10kΩ
TA = 25 °C
400
200
10kΩ
100
27kΩ
40
20
10
-60 -40 -20
56kΩ
0 20 40 60
80 100 120
Ambient temperature T ( °C )
A
10000
4000
2000
1000
400
200
100
40
20
10
Off State Forward Current vs.
Ambient Temperature
Normalized to
V = 50V
AK
TA = 25 °C
VAK = 400V
V = 200V
AK
VAK = 50V
4
2
1
0
25
50
75
100
Ambient temperature TA ( °C )
1000
400
dV/dt vs. Ambient temperature
RGK =300Ω
100
40
1kΩ
10
4
1
0.4
0.1
5/12/00
10kΩ
27kΩ
56kΩ
25
50
75
100
Ambient temperature TA ( °C )
Maximum Transient Thermal Impedence
1000
400
200
1. Lead temperature measured at the
widest portion of the SCR anode lead.
2. Ambient temperature measured at
a point 1/2" from the device.
100
Junction to ambient
40
20
10
4
2
1
0.001 0.01 0.1
1 2 4 10 100
Time (seconds)
On State Current vs. Maximum
Allowable Temperature
100
90
1. Ambient temp. half-sine wave avg
2. Ambient temp. DC current
3. Anode lead temp. half-sine wave avg
80
4. Anode lead temp. DC current
70
60
50
40
30
20
10
0
0
1. 2. 3. 4.
0.2 0.4 0.6 0.8 1.0
On state current ( Α )
2
1
0.4
0.2
0.1
0.04
0.02
0.01
0
On State Characteristics
Increases to forward
breakover voltage
1
2
3
4
On state voltage V ( V )
T
DB91033-AAS/A3
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