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NE5517A View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
NE5517A Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NE5517, NE5517A, AU5517
B
AMP
BIAS
INPUT
16
B
DIODE
BIAS
15
B
INPUT
(+)
14
B
INPUT
(−)
13
B
OUTPUT
12
V+ (1)
11
B
BUFFER
INPUT
10
B
BUFFER
OUTPUT
9
B
+
+
A
1
2
3
4
5
6
7
AMP
BIAS
INPUT
A
DIODE
BIAS
A
INPUT
(+)
A
INPUT OUTPUT
V−
(−)
A
A
BUFFER
INPUT
A
NOTE: V+ of output buffers and amplifiers are internally connected.
8
BUFFER
OUTPUT
A
Figure 2. Connection Diagram
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (Note 1)
Power Dissipation, Tamb = 25 °C (Still Air) (Note 2)
NE5517N, NE5517AN
NE5517D, AU5517D
VS
44 VDC or ±22
V
PD
mW
1500
1125
Thermal Resistance, Junction−to−Ambient
D Package
N Package
RqJA
°C/W
140
94
Differential Input Voltage
Diode Bias Current
Amplifier Bias Current
Output Short-Circuit Duration
Buffer Output Current (Note 3)
Operating Temperature Range
NE5517N, NE5517AN
AU5517T
VIN
ID
IABC
ISC
IOUT
Tamb
±5.0
V
2.0
mA
2.0
mA
Indefinite
20
mA
°C
0 °C to +70 °C
−40 °C to +125 °C
Operating Junction Temperature
TJ
150
°C
DC Input Voltage
VDC
+VS to −VS
Storage Temperature Range
Tstg
−65 °C to +150 °C
°C
Lead Soldering Temperature (10 sec max)
Tsld
230
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For selections to a supply voltage above ±22 V, contact factory.
2. The following derating factors should be applied above 25 °C
N package at 10.6 mW/°C
D package at 7.1 mW/°C.
3. Buffer output current should be limited so as to not exceed package dissipation.
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