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NE334S01-T1 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
Manufacturer
NE334S01-T1
NEC
NEC => Renesas Technology NEC
NE334S01-T1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
NE334S01
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain to Source Voltage V
4.0
VGS
Gate to Source Voltage V
-3.0
IDS
Drain Current
mA
IDSS
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C -65 to +125
PT
Total Power Dissipation mW
300
Note:
1. Operation in excess of any one of these conditions may result
in permanent damage.
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 2 V, IDS = 15 mA
FREQ.
(GHz)
NFMIN
(dB)
GA
ΓOPT
(dB) MAG ANG
Rn/50
2
0.23
17.0 0.77
15
0.19
4
0.25
16.0 0.58
43
0.18
6
0.28
14.7 0.43
82
0.13
8
0.31
13.6 0.32
127
0.08
10
0.38
12.5 0.27
175
0.07
12
0.48
11.5 0.27 -139
0.10
14
0.60
10.5 0.34 -100
0.17
16
0.73
9.6 0.48
-70
0.29
18
0.88
8.8 0.69
-56
0.46
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
500
400
300
200
100
0
50
100 150
200 250
Ambient Temperature, TA (°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
VDS = 2 V
80
60
40
20
0
-2.0
-1.0
0
Gate to Source Voltage, VGS (V)
TYPICAL CONSTANT NOISE FIGURE
CIRCLE (VDS = 2 V, IDS = 15 mA, f = 4 GHz)
0.5
0
1.0
2.0
Γopt
0.4 dB
0.6 dB
0.8 dB
-0.5
-2.0
-1.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
VGS = 0 V
80
-0.2 V
60
40
-0.4 V
20
-0.6 V
0
1
2
3
4
5
Drain to Source Voltage, VDS (V)
 

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