NDL5461P2D View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

NDL5461P2D

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ80 µm InGaAs PIN PHOTO DIODE MODULE

NEC => Renesas Technology 

TYPICAL CHARACTERISTICS

WAVELENGTH DEPENDENCE

OF QUANTUM EFFICIENCY

100

80

60

40

20

0

0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7

Wavelength λ ( µm)

REVERSE VOLTAGE DEPENDENCE

OF DARK CURRENT

10

TC = 75 ˚C

1.0

50 ˚C

25 ˚C

0.1

0 ˚C

–25 ˚C

0.01

0.001

0

10

20

Reverse Voltage VR (V)

NDL5461P Series

•

TEMPERATURE DEPENDENCE

OF RESPONSIVITY

10

λ = 1 300 nm

0

–10

–60 –40 –20 0 20 40 60 80 100

Operating Case Temperature TC (˚C)

TEMPERATURE DEPENDENCE

101 OF DARK CURRENT

VR = 5 V

100

10–1

10–2

10–3

–60 –40 –20 0 20 40 60 80 100

Operating Case Temperature TC (˚C)

REVERSE VOLTAGE DEPENDENCE

OF TERMINAL CAPACITANCE

5

f = 1.0 MHz

1

0.5

0.01

0.1

1

10

100

Reverse Voltage VR (V)

3

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