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NB3N551DR2G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
NB3N551DR2G Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
NB3N551
Table 3. MAXIMUM RATINGS
Symbol
Parameter
VDD
VI/VO
TA
Tstg
qJA
Positive Power Supply
Input/Output Voltage
Operating Temperature Range, Industrial
Storage Temperature Range
Thermal Resistance (JunctiontoAmbient)
Condition 1
GND = 0 V
t 1.5 ns
0 lfpm
500 lfpm
Condition 2
SOIC8
Rating
7.0
GND–1.5 VI/VO VDD+1.5
40 to +85
65 to +150
190
130
Units
V
V
°C
°C
°C/W
°C/W
qJC
Thermal Resistance (JunctiontoCase)
qJA
Thermal Resistance (JunctiontoAmbient)
(Note 1)
0 lfpm
500 lfpm
SOIC8
DFN8
DFN8
41 to 44
129
84
°C/W
°C/W
qJC
Thermal Resistance (JunctiontoCase)
(Note 1)
DFN8
35 to 40
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. JEDEC standard multilayer board 2S2P (2 signal, 2 power)
Table 4. ATTRIBUTES
Characteristic
Value
ESD Protection
Human Body Model
Machine Model
> 4 kV
> 200 V
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 2)
Level 1
Flammability Rating
Oxygen Index: 28 to 34 UL94 code V0 @ 0.125 in
Transistor Count
531 Devices
Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test
2. For additional Moisture Sensitivity information, refer to Application Note AND8003/D.
http://onsemi.com
3
 

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