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NB3N502DG View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
NB3N502DG
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NB3N502DG Datasheet PDF : 5 Pages
1 2 3 4 5
NB3N502
Table 5. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Units
VDD Positive Power Supply
VI
Input Voltage
GND = 0 V
7
V
GND – 0.5 = VI =
V
VDD + 0.5
TA
Operating Temperature Range
Tstg
Storage Temperature Range
qJA
Thermal Resistance (Junction−to−Ambient)
0 LFPM
500 LFPM
SOIC−8
SOIC−8
−40 to +85
−65 to +150
190
130
°C
°C
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
(Note 1)
SOIC−8
41 to 44
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
Table 6. DC CHARACTERISTICS (VDD = 3 V to 5.5 V unless otherwise noted, GND = 0 V, TA = −40°C to +85°C) (Note 2)
Symbol
Characteristic
Min
Typ
Max
Unit
IDD
Power Supply Current
(unloaded CLKOUT operating at 100 MHz with 20 MHz crystal)
20
mA
VOH
Output HIGH Voltage
IOH = −25 mA TTL High
2.4
V
VOL
Output LOW Voltage
IOL = 25 mA
0.4
V
VIH
Input HIGH Voltage, CLK only (pin 1)
(VDD / 2) + 1 VDD / 2
V
VIL
Input LOW Voltage, CLK only (pin 1)
VDD / 2 (VDD / 2) −1
V
VIH
Input HIGH Voltage, S0, S1
VDD – 0.5
V
VIL
Input LOW Voltage, S0, S1
0.5
V
VIM
Input level of S1 when open (Input Mid Point)
VDD ÷ 2
V
Cin
Input Capacitance, S0, S1
4
pF
ISC
Output Short Circuit Current
± 70
mA
2. Parameters are guaranteed by characterization and design, not tested in production.
Table 7. AC CHARACTERISTICS (VDD = 3 V to 5.5 V unless otherwise noted, GND = 0 V, TA = −40°C to +85°C) (Note 3)
Symbol
Characteristic
Min
Typ
Max
fXtal
fCLK
fOUT
DC
Crystal Input Frequency
Clock Input Frequency
Output Frequency Range
VDD = 4.5 to 5.5 V (5.0 V ± 10%)
VDD = 3.0 to 3.6 V (3.3 V ± 10%)
Clock Output Duty Cycle at 1.5 V up to 190 MHz
5
27
2
50
14
190
14
120
45
50
55
tjitter (rms) Period Jitter (RMS, 1 σ)
15
tjitter (pk−to−pk) Total Period Jitter, (peak−to−peak)
±40
tr/tf
Output rise/fall time (0.8 V to 2.0 V / 2.0 V to 0.8 V)
1
3. Parameters are guaranteed by characterization and design, not tested in production.
Unit
MHz
MHz
MHz
MHz
%
ps
ps
ns
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