NB6L11DR2 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NB6L11DR2

2.5 V/3.3 V Multilevel Input to Differential LVPECL/LVNECL 1:2 Clock or Data Fanout Buffer/Translator

ON Semiconductor 

NB6L11

Q0 1

8 VCC

Q0 2

Q1 3

R2

7D

R1

R1 6 D

R2

Q1 4

5 VEE

Figure 1. Pinout (Top View) and Logic Diagram

Table 1. PIN DESCRIPTION

Pin Name

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 1

Q0

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 2

Q0

I/O

ECL Output

ECL Output

Default State

Description

−

Non−inverted differential clock/data output 0. Typically termi-

nated with 50 W Resistor to VTT = VCC − 2 V.

−

Inverted differential clock/data output 0. Typically terminated with

50 W resistor to VTT = VCC − 2 V.

3

Q1

ECL Output

−

Non−inverted differential clock/data output 1. Typically termi-

nated with 50 W resistor to VTT = VCC − 2 V.

4

Q1

ECL Output

−

Inverted differential clock/data output 1. Typically terminated with

50 W resistor to VTT = VCC − 2 V.

5

VEE

−

−

Negative power supply voltage

6

D

LVDS, CML, LVPECL, LVNECL,

LVCMOS, LVTTL Input

HIGH

Inverted differential clock/data input. Internal 37.5 kW to VCC and

75 kW to VEE.

7

D

LVDS, CML, LVPECL, LVNECL,

LVCMOS, LVTTL Input

LOW

Non−inverted differential clock/data input. Internal 75 kW to VCC

and 37.5 kW to VEE.

8

VCC

−

−

Positive power supply voltage

Table 2. ATTRIBUTES

Characteristics

Internal Input Pulldown Resistor

Internal Input Pullup Resistor

ESD Protection

Human Body Model

Machine Model

Charged Device Model

Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)

SOIC−8

TSSOP−8

Flammability Rating

Oxygen Index: 28 to 34

Transistor Count

Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test

1. For additional information, see Application Note AND8003/D.

Value

37.5 kW

75 kW

> 2 kV

> 100 V

> 1 kV

Pb Pkg

Pb−Free Pkg

Level 1

Level 1

Level 1

Level 3

UL 94 V−0 @ 0.125 in

167 Devices

http://onsemi.com

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