MUN5111DW1 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MUN5111DW1

Dual PNP Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ

ON Semiconductor 

MUN5111DW1, NSBA114EDXV6, NSBA114EDP6

PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A

ISSUE F

D

−X−

A

L

654

E

−Y−

HE

12 3

b 65 PL

C

e

0.08 (0.003) M X Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

INCHES

DIM MIN NOM MAX MIN NOM MAX

A 0.50 0.55 0.60 0.020 0.021 0.023

b 0.17 0.22 0.27 0.007 0.009 0.011

C 0.08 0.12 0.18 0.003 0.005 0.007

D 1.50 1.60 1.70 0.059 0.062 0.066

E 1.10 1.20 1.30 0.043 0.047 0.051

e

0.5 BSC

0.02 BSC

L 0.10 0.20 0.30 0.004 0.008 0.012

HE 1.50 1.60 1.70 0.059 0.062 0.066

SOLDERING FOOTPRINT*

0.3

0.0118

1.35

0.0531

1.0

0.0394

0.45

0.0177

0.5 0.5

0.0197 0.0197

ǒ Ǔ SCALE 20:1

mm

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

7

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