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PDM31532SA15TA View Datasheet(PDF) - Paradigm Technology

Part NamePDM31532SA15TA Paradigm-Technology
Paradigm Technology 
Description64K x 16 CMOS 3.3V Static RAM
PDM31532SA15TA Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
PDM31532
DC Electrical Characteristics (VCC = 3.3V ± 0.3V)
Symbol Parameter
Test Conditions
ILI
Input Leakage Current
VCC = Max., VIN = Vss to VCC
ILO
Output Leakage Current
VCC= Max.,
CE = VIH, VOUT = Vss to VCC
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
IOL = 8 mA, VCC = Min.
IOH = –4 mA, VCC = Min.
NOTE: 4. VIL(min) = –3.0V for pulse width less than 20 ns.
Min. Max. Unit
Com’l/ –5
Ind.
5
µA
Com’l/ –5
Ind.
5
µA
–0.3(4)
0.8
V
2.2
Vcc +
V
0.3
0.4
V
2.4
V
Power Supply Characteristics
-9 -10
-12
-15
-20
Symbol Parameter
Com’l Com’l Com’l Ind. Com’l Ind. Com’l Ind. Unit
ICC Operating Current SA
CE = VIL
175 165 150 160 130 140 120 130 mA
f = fMAX = 1/tRC
VCC = Max.
IOUT = 0 mA
LA 150 140 130 140 120 130 110 120 mA
ISB Standby Current
SA
30 30 30 30 30 30 30 30 mA
CE = VIH
f = fMAX = 1/tRC
VCC = Max.
LA
15 15 15 15 15 15 15 15 mA
ISB1 Full Standby
Current
SA
5
5
5
5
5
5
5
5 mA
CE VCC – 0.2V
f=0
LA
2
2
2
5
2
5
2
5 mA
VCC = Max.,
VIN VCC – 0.2V
or 0.2V
NOTE: All values are maximum guaranteed values.
4
Rev. 4.3 - 3/27/98
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