PDM31532LA9TA View Datasheet(PDF) - Paradigm Technology

Part Name

Description

Manufacturer

PDM31532LA9TA

64K x 16 CMOS 3.3V Static RAM

Paradigm Technology 

PDM31532

DC Electrical Characteristics (VCC = 3.3V ± 0.3V)

Symbol Parameter

Test Conditions

ILI

Input Leakage Current

VCC = Max., VIN = Vss to VCC

ILO

Output Leakage Current

VCC= Max.,

CE = VIH, VOUT = Vss to VCC

VIL

Input Low Voltage

VIH

Input High Voltage

VOL

Output Low Voltage

VOH

Output High Voltage

IOL = 8 mA, VCC = Min.

IOH = –4 mA, VCC = Min.

NOTE: 4. VIL(min) = –3.0V for pulse width less than 20 ns.

Min. Max. Unit

Com’l/ –5

Ind.

5

µA

Com’l/ –5

Ind.

5

µA

–0.3(4)

0.8

V

2.2

Vcc +

V

0.3

—

0.4

V

2.4

—

V

Power Supply Characteristics

-9 -10

-12

-15

-20

Symbol Parameter

Com’l Com’l Com’l Ind. Com’l Ind. Com’l Ind. Unit

ICC Operating Current SA

CE = VIL

175 165 150 160 130 140 120 130 mA

f = fMAX = 1/tRC

VCC = Max.

IOUT = 0 mA

LA 150 140 130 140 120 130 110 120 mA

ISB Standby Current

SA

30 30 30 30 30 30 30 30 mA

CE = VIH

f = fMAX = 1/tRC

VCC = Max.

LA

15 15 15 15 15 15 15 15 mA

ISB1 Full Standby

Current

SA

5

5

5

5

5

5

5

5 mA

CE ≥ VCC – 0.2V

f=0

LA

2

2

2

5

2

5

2

5 mA

VCC = Max.,

VIN ≥ VCC – 0.2V

or ≤ 0.2V

NOTE: All values are maximum guaranteed values.

4

Rev. 4.3 - 3/27/98

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