MSA-1100 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
Manufacturer
MSA-1100 Datasheet PDF : 4 Pages
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MSA-1100 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
100 mA
Power Dissipation[2,3]
650 mW
RF Input Power
Junction Temperature
Storage Temperature
+13 dBm
200°C
–65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting␣ Surface (TMS)= 25°C.
3. Derate at 17.5 mW/°C for TMounting␣ Surface > 163°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods.
Thermal Resistance[2,4]:
θjc[2] = 57°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions[2]: Id = 60 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 0.1 GHz
∆GP
f3 dB
Gain Flatness
3 dB Bandwidth[3]
f = 0.1 to 1.0 GHz
VSWR
Input VSWR
Output VSWR
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
NF
50 Ω Noise Figure
f = 0.5 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 0.5 GHz
IP3
Third Order Intercept Point
f = 0.5 GHz
tD
Group Delay
f = 0.5 GHz
Vd
Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
dB
GHz
dB
dBm
dBm
psec
V
4.5
mV/°C
Typ. Max.
12.5
± 0.7
1.6
1.7:1
1.9:1
3.5
17.5
30.0
125
5.5 6.5
–8.0
Notes:
1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. Referenced from 0.05 GHz gain (GP).
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-1100-GP4
100
6-451
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