MOC119SM View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
MOC119SM Datasheet PDF : 8 Pages
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Electrical Characteristics (TA = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions Min.
EMITTER
VF
CIN
IR
DETECTOR
Input Forward Voltage
Input Capacitance
Reverse Leakage Current
IF = 10mA
VR = 0, f = 1MHz
VR = 3.0V
BVCEO Collector-Emitter Breakdown IC = 100µA
30
Voltage
BVECO Emitter-Collector Breakdown IE = 10µA
7
Voltage
ICEO
Collector-Emitter Dark Current VCE = 10V
Typ.* Max.
1.15
1.5
18
0.05
100
100
Unit
V
pF
µA
V
V
nA
Transfer Characteristics
Symbol
Parameter
DETECTOR
CTR Current Transfer Ratio
VCE (SAT) Collector-Emitter
Saturation Voltage
SWITCHING TIMES
ton
Turn-on Time
toff
Turn-off Time
Test Conditions Min. Typ.* Max. Units
IF = 10mA, VCE = 2V
300
450
%
IC = 10mA, IF = 10mA
1
V
VCE = 10V, RL = 100Ω,
3.5
µs
IF = 5mA
95
µs
Isolation Characteristics
Symbol
Characteristic
VISO
Input-Output Isolation
Voltage
RISO
CISO
Isolation Resistance
Isolation Capacitance
*Typical values at TA = 25°C
Test Conditions
f = 60Hz, t = 1 sec.
VI-O = 500VDC
V = 0V, f = 1MHz
Min.
7500
Typ.*
1011
0.2
Max.
Units
Vac(pk)
Ω
pF
©2008 Fairchild Semiconductor Corporation
MOC119M Rev. 1.0.3
3
www.fairchildsemi.com
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