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TIP2955 View Datasheet(PDF) - Unspecified

Part Name
Description
Manufacturer
TIP2955 Datasheet PDF : 3 Pages
1 2 3
TIP3055, 2955
Complementary Power Transistors
Complementary Silicon Power Transistors are designed for use in general
purpose power amplifier and switching applications.
Features:
Power Dissipation-PD = 90W at TC = 25°C.
DC Current Gain hFE = 20 ~ 100 at IC = 4.0A.
VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.
Pin 1. Base
2. Collector
3. Emitter
Maximum Ratings
Dimensions
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Minimum Maximum
20.63
22.38
15.38
16.20
1.90
2.70
5.10
6.10
14.81
15.22
11.72
12.84
4.20
4.50
1.82
2.46
2.92
3.23
0.89
1.53
5.26
5.66
18.50
21.50
4.68
5.36
2.40
2.80
3.25
3.65
0.55
0.70
Dimensions : Millimetres
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Power Dissipation at Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCER
VCBO
VEBO
IC
IB
PD
TJ, TSTG
Rating
60
70
100
7.0
15
7.0
90
0.72
-65 to +150
NPN PNP
TIP3055 TIP2955
15 Ampere
Complementary Silicon
Power Transistors
60 Volts
90 Watts
TO-247(3P)
Unit
V
A
W
W/°C
°C
Page 1
31/05/05 V1.0
 

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