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HUFA75332S3ST View Datasheet(PDF) - Fairchild Semiconductor

Part NameHUFA75332S3ST Fairchild
Fairchild Semiconductor Fairchild
Description60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75332S3ST Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
HUFA75332G3, HUFA75332P3, HUFA75332S3S
Typical Performance Curves (Continued)
1000
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
VGS = 10V
100 TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
500
TJ = MAX RATED
TC = 25oC
500 If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
100µs
100
STSATRATRINTIGNGTJT=J 2=52o5CoC
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
VDSS(MAX) = 55V
1ms
10ms
1
1
10
100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
STARTING TJ = 150oC
10
0.001
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
150
120
VGS = 20V
VGS = 10V
90
VGS = 7V
VGS = 6V
60
VGS = 5V
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
TC = 25oC
0
1.5
3.0
4.5
6.0
7.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120
90
60
25oC
-55oC
175oC
30
VDD = 15V
0
0
1.5
3.0
4.5
6.0
7.5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
©2002 Fairchild Semiconductor Corporation
HUFA75332G3, HUFA75332P3, HUFA75332S3S Rev. A
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