HUFA75332S3S View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
HUFA75332S3S Datasheet PDF : 10 Pages
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HUFA75332G3, HUFA75332P3, HUFA75332S3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 60A
ISD = 60A, dISD/dt = 100A/µs
ISD = 60A, dISD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
-
1300
-
pF
-
480
-
pF
-
115
-
pF
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
75
ns
-
-
140
nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125 150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
80
60
40
20
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
HUFA75332G3, HUFA75332P3, HUFA75332S3S Rev. A
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