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HUFA75332S3ST View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
HUFA75332S3ST 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs Fairchild
Fairchild Semiconductor Fairchild
HUFA75332S3ST Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
HUFA75332G3, HUFA75332P3, HUFA75332S3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
55
V
55
V
±20
V
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
60
Figure 4
Figure 6
145
0.97
-55 to 175
300
260
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 60A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
tON
td(ON)
tr
td(OFF)
tf
tOFF
(Figure 3)
TO-247
TO-220, TO-263
VDD = 30V, ID 60A,
RL = 0.50, VGS = 10V,
RGS = 6.8
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 60A,
RL = 0.50
Ig(REF) = 1.0mA
(Figure 13)
MIN TYP MAX UNITS
55
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100
nA
2
-
4
V
-
0.016 0.019
-
-
1.03 oC/W
-
-
30
oC/W
-
-
62
oC/W
-
-
100
ns
-
12
-
ns
-
55
-
ns
-
11
-
ns
-
25
-
ns
-
-
55
ns
-
70
85
nC
-
40
50
nC
-
2.5
3.0
nC
-
6
-
nC
-
15
-
nC
©2002 Fairchild Semiconductor Corporation
HUFA75332G3, HUFA75332P3, HUFA75332S3S Rev. A
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