MMBTH10LT1G, MMBTH10−4LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 100 μAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 10 μAdc, IC = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
V(BR)CEO
25
−
V(BR)CBO
30
−
V(BR)EBO
3.0
−
ICBO
−
−
IEBO
−
−
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 mAdc, VCE = 10 Vdc)
hFE
MMBTH10LT1
60
−
MMBTH10−4LT1
120
−
Collector−Emitter Saturation Voltage
(IC = 4.0 mAdc, IB = 0.4 mAdc)
Base−Emitter On Voltage
(IC = 4.0 mAdc, VCE = 10 Vdc)
VCE(sat)
−
−
VBE
−
−
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
fT
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
MMBTH10LT1
MMBTH10−4LT1
650
−
800
−
Collector−Base Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Common−Base Feedback Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Collector Base Time Constant
(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
Ccb
−
−
Crb
−
−
rb′Cc
−
−
Max
Unit
−
Vdc
−
Vdc
−
Vdc
100
nAdc
100
nAdc
−
−
240
0.5
Vdc
0.95
Vdc
MHz
−
−
0.7
pF
0.65
pF
9.0
ps
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