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MMBTH10LT3G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
MMBTH10LT3G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMBTH10LT3G Datasheet PDF : 0 Pages
MMBTH10LT1G, MMBTH104LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
CollectorBase Breakdown Voltage
(IC = 100 μAdc, IE = 0)
EmitterBase Breakdown Voltage
(IE = 10 μAdc, IC = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
V(BR)CEO
25
V(BR)CBO
30
V(BR)EBO
3.0
ICBO
IEBO
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 mAdc, VCE = 10 Vdc)
hFE
MMBTH10LT1
60
MMBTH104LT1
120
CollectorEmitter Saturation Voltage
(IC = 4.0 mAdc, IB = 0.4 mAdc)
BaseEmitter On Voltage
(IC = 4.0 mAdc, VCE = 10 Vdc)
VCE(sat)
VBE
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
fT
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
MMBTH10LT1
MMBTH104LT1
650
800
CollectorBase Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
CommonBase Feedback Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Collector Base Time Constant
(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
Ccb
Crb
rbCc
Max
Unit
Vdc
Vdc
Vdc
100
nAdc
100
nAdc
240
0.5
Vdc
0.95
Vdc
MHz
0.7
pF
0.65
pF
9.0
ps
http://onsemi.com
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